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RCD040N25
Fig.7 Forward Transfer Admittance vs. Drain Current
10
V DS =10V
pulsed
　
10
Data Sheet
Fig.8 Source Current vs. Source-Drain Voltage
V GS =0V
pulsed
1
1
T a = 125 ° C
T a = 75 ° C
T a = 25 ° C
T a = - 25 ° C
0.1
0.01
T a = 125 ° C
T a = 75 ° C
T a = 25 ° C
T a = - 25 ° C
0.1
0.01
0.01
0.1
1
10
0.0
0.5
1.0
1.5
Drain Current : I D [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
2400
10000
Source-Drain Voltage : V SD [V]
Fig.10 Switching Characteristics
2200
2000
1800
1600
1400
T a =25 ° C
pulsed
1000
t d(off)
t f
V DD ≒ 125V
V GS =10V
R G =10 W
T a =25 ° C
Pulsed
1200
1000
800
600
I D =2.0A
I D =4.0A
100
10
400
200
0
1
t d(on)
t r
0
2
4
6
8
10
12
14
16
18
20
0.01
0.1
1
10
15
10
5
T a =25 ° C
V DD =125V
I D =4A
Pulsed
Gate-Source Voltage : V GS [V]
Fig.11 Dynamic Input Characteristics
1000
100
10
Drain Current : I D [A]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
C iss
C oss
T a =25 ° C
f=1MHz
V GS =0V
C rss
0
1
0
5
10
15
0.01
0.1
1
10
100
1000
Total Gate Charge : Q g [nC]
Drain-Source Voltage : V DS [V]
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4/6
2011.11 - Rev.A
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